基于级联常通型SiC JFET的快速中压直流固态断路器设计及实验验证
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1.湖南工业大学电气与信息工程学院,湖南 株洲 412007;2.湖南大学电气与信息工程学院,湖南 长沙 410082

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湖南省自然科学基金项目资助(2021JJ40172)


Design and experimental verification of an ultrafast medium-voltage DC solid-state circuit breaker using cascaded normally-on SiC JFETs
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1. College of Electrical and Information Engineering, Hunan University of Technology, Zhuzhou 412007, China; 2. College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

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    摘要:

    固态断路器(solid state circuit breaker, SSCB)是直流配电网中实现快速、无弧隔离直流故障的关键保护装置。首先提出了一种基于级联常通型碳化硅(silicon carbide, SiC)结型场效应晶体管(junction field effect transistor, JFET)的新型中压直流SSCB拓扑,直流故障发生时利用金属氧化物压敏电阻(metal oxide varistor, MOV)向SSCB主开关级联常通型SiC JFET器件的栅源极提供驱动电压,可快速实现直流故障保护。其次详细分析了SSCB关断和开通过程的运行特性,并提出了SSCB驱动电路关键参数设计方法。最后研制了基于3个级联常通型SiC JFET器件的1.5 kV/63 A中压SSCB样机,通过短路故障、故障恢复实验验证了设计方法的有效性。结果表明该SSCB关断250 A短路电流的响应时间约为20 s,故障恢复导通响应时间约为12 s,为中压直流SSCB的拓扑优化设计和级联常通型SiC JFET器件的动静态电压均衡性能提升提供了支撑。

    Abstract:

    The solid-state circuit breaker (SSCB) is a crucial component in the protection of DC distribution networks in that they facilitate reliable, arc-free, and fast isolation of DC faults. First, a novel medium-voltage DC SSCB topology based on cascaded silicon carbide (SiC) junction field effect transistors (JFETs) is proposed. When a DC fault occurs, metal oxide varistors (MOVs) are used to provide driving voltage to the gate-source terminals of cascaded normally-on SiC JFETs of the SSCB main switch. These can achieve fast DC fault protection. Additionally, the operational characteristics of the SSCB turn-off and turn-on processes are analyzed in detail, and the design method of key parameters of the SSCB drive circuit is proposed. Finally, a 1.5 kV/63 A medium-voltage SSCB prototype based on three cascaded normally-on SiC JFETs is developed, and the effectiveness of the design scheme is verified through short-circuit fault and fault recovery experiments. The results indicate that the response time for the SSCB to turn off the 250A short-circuit current is about 20 s. Fault recovery conduction response time is about 12 s. This provides a foundation for the topology optimization design of medium-voltage DC SSCB and the improvement of dynamic and static voltage balance performance of cascaded normally-on SiC JFETs.

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何 东,徐星冬,兰 征,等.基于级联常通型SiC JFET的快速中压直流固态断路器设计及实验验证[J].电力系统保护与控制,2024,52(5):158-167.[HE Dong, XU Xingdong, LAN Zheng, et al. Design and experimental verification of an ultrafast medium-voltage DC solid-state circuit breaker using cascaded normally-on SiC JFETs[J]. Power System Protection and Control,2024,V52(5):158-167]

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  • 收稿日期:2023-09-28
  • 最后修改日期:2023-12-14
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  • 在线发布日期: 2024-03-05
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